I-photovoltaic panel EL detector uhlobo lwethuluzi elisetshenziselwa ukuthola iphaneli ye-photovoltaic (iphaneli yelanga). Isekelwe kusimiso se-electroluminescence se-crystalline silicon. I-Electroluminescence (el) yinto lapho i-voltage esetshenziswayo isheshisa ukunyakaza kwabathwali ohlwini lwezinto ze-semiconductor ngaphansi kwesenzo sensimu kagesi, iguqula ingxenye yamandla e-kinetic ibe amandla akhanyayo. I-photovoltaic panel EL detector isebenzisa lesi simiso ukuthwebula isithombe se-crystalline silicon esiseduze ne-infrared ngekhamera ye-infrared enesisombululo esiphezulu bese ithola isithombe seseli.
Umsebenzi oyinhloko we-photovoltaic panel EL detector ukuthola ngokunembile amaphutha ahlukahlukene ephaneli ye-photovoltaic, amapharamitha afaka phakathi ukuphuka kwesango, ukuqhekeka, i-fragment, i-fragment, i-braze welding, i-sintered mesh, i-black core, i-Letter boxing, i-blending, i-chip esebenza kahle ephansi, i-Edge etching, i-PID, i-attenuation, i-hot spot attenuation, njll. . La maphutha angathinta ukusebenza kanye nekhwalithi yamaphaneli e-photovoltaic futhi, uma engatholakali futhi engaxazululwa ngesikhathi, angathinta kabi ukusebenza kahle kanye nokuzinza kohlelo lonke lokukhiqizwa kwamandla elanga.
Ngaphezu kokukwazi ukubona ngokunembile amaphutha amaphaneli e-PV, i-PV panel EL detector inezinye izinzuzo. Isibonelo, inokunemba okuphezulu nokusebenza kahle, ingabona ngokushesha nangokunembile indawo kanye nohlobo lwamaphutha. Ngaphezu kwalokho, i-EL detector inenzuzo yokuhlola ebhubhisayo yokuthi ngeke ibangele umonakalo ongokwenyama kuphaneli ye-photovoltaic evivinywayo noma ithinte ukusebenza kwayo.
Izithombe zokuhlolwa kwe-EL ezifanelekile zimi kanje:
Nazi ezinye zeziphambeko ezivamile kumaphaneli e-photovoltaic:
Ibhethri liphukile
(1). Izimbangela: iphaneli yebhethri yaqhekeka ngenxa yamandla angaphandle ngesikhathi sokushisela noma sokwelashwa; ekushiseni okuphansi, iphaneli yebhethri ayizange iphathwe ngokushisa kwangaphambili, futhi ngemva kwesikhathi esifushane sokushisa okuphezulu, kwavela ngokuzumayo ukwanda, okwaholela ekuqhekekeni; Izinga lokushisa lebhethri liphezulu kakhulu ngesikhathi sokushisela okukodwa noma ukushisela okulandelanayo.
(2). Umphumela wemojuli: ubangela ukuncishiswa kwamandla kwemojuli, futhi umphumela we-hot spot uzobangelwa lapho imojuli isebenza isikhathi eside, okuzothinta ngqo ukusebenza kwebhethri kuze kube yilapho imojuli ishiswa futhi ilahlwa.
(3). Izinyathelo zokuvimbela: ngesikhathi sokushisela noma sokucubungula ukuze kugwenywe umthelela wamandla angaphandle epuletini lebhethri, ngesikhathi sokushisela ipuleti lebhethri elilodwa noma elihlangene ukuze kulungiswe ukushisa kwangaphambili, izinga lokushisa lokusebenza lensimbi kagesi kumele lihlangabezane nezidingo zobuchwepheshe zenqubo yokukhiqiza.
Isango Eliphukile
(1). Izici ze-EL imaging: kusukela esithombeni se-El, kunemigqa eqondile phakathi kwemigqa emibili yegridi, futhi kunemigqa emnyama eceleni komugqa wegridi oyinhloko weseli. Ngesikhathi esifanayo, ukukhanya okubuthakathaka noma ukungakhanyi kahle kwegridi encane kubangelwa kakhulu amaseli angaxhumene.
(2). Izizathu: isizathu esiyinhloko somonakalo wesango yindawo yokuphuka kwesango elincane kanye nokulahlekelwa kwesango elincane, okuholela emgqeni wesango oyinhloko futhi umugqa wesango elincane awukwazi ukwakha iluphu. Ngesikhathi esifanayo, igridi ayiyona i-welding ejwayelekile noma ukuphrinta ibhodi lebhethri, ikhwalithi yokuphrinta isikrini ayilungile noma amapharamitha okuphrinta isikrini awasethwanga kahle, ukusika i-silicon kungalingani, iphutha.
(3). Umphumela wemojuli: ngenkathi kunciphisa ukusebenza kahle kwemojuli ye-photovoltaic, ayilungele ukuqoqa ugesi.
(4). Izinyathelo zokuvimbela: ukusetha okunengqondo amapharamitha okuphrinta isikrini, ukuhlanganiswa kwezinto zesikrini, ukusungula izinqubo zokusebenza ezijwayelekile zesikrini, ukuqapha ngesikhathi sangempela i-RS kunganciphisa kakhulu ukuphuka kwesango lokuphrinta isikrini, ngesikhathi esifanayo ingafakelwa umshini wokuhlunga ozenzakalelayo wokuqapha ku-inthanethi.
I-chip emnyama
(1). Izici ze-EL imaging: esithombeni se-EL, ungabona imibuthano eqondile ekhanya kancane kancane kusukela maphakathi kuya emaphethelweni weseli. Ingxenye yebhethri imnyama futhi isithombe sibonakala sibuthakathaka noma singakhanyi. Lokhu kwakha indawo ehlanganisiwe exineneyo, uma kunamandla, maphakathi nebhethri kuvela indawo emnyama.
(2). Enkambisweni yokwenza i-silicon rod crystallization, i-coefficient ephezulu yokuhlukanisa i-silicon rod ihlobene ngqo nokuncibilika kwe-oxygen, futhi izinto ze-silicon zingcoliswa ngamazinga ahlukene, okwenza ingxenye yebhethri ibe mnyama. Ngesikhathi esifanayo, ngenxa yokunciphisa isikhathi sokuqina kwe-directional, ukukhishwa kokushisa okucashile kanye nokulingana kwezinga lokushisa kokuncibilika akuphakeme, isivinini sokukhula kwe-crystal siyasheshiswa, futhi imbangela eyinhloko yokukhubazeka kwangaphakathi ukucindezeleka okukhulu kokushisa.
(3). Umthelela wengxenye: ngemva kokuvela kwe-chip emnyama engxenyeni, ukusebenza isikhathi eside kuzobangela ukuwohloka kokushisa, lapho ijika eliyisici sengxenye yokuhlola i-IV, ijika livela ngesimo sesitebhisi, ukusebenza isikhathi eside kuzobangela amandla okukhipha ingxenye ukuba ehle.
(4). Izindlela zokuvimbela: lungisa ngokufanele i-big coagulation coefficient kanye nokuncibilika komoya-mpilo entongeni ye-silicon ukuze ugweme ukungcola kwezinto ze-silicon.
I-Short Circuit Black Chip (i-non-short circuit black chip)
(1). Izici zesithombe se-EL: amamojula e-photovoltaic endaweni ethile azovela ingxenye eyodwa noma ngaphezulu yebhethri elimnyama ngokuphelele.
(2). Izimbangela: ukujikeleza okufushane phakathi kwama-electrode amahle nangalungile, ukushisela okuphambene phakathi kwama-electrode amahle nangalungile e-diode yebhokisi lokuxhumanisa, uxhumano olunephutha kanye nokushisela okubonakalayo phakathi kwama-electrode amahle nangalungile, njll., amayunithi eseli ahlanganisiwe angasebenzi kahle, kanye nama-wafer e-silicon asezingeni eliphansi noma ama-wafer ohlobo lwe-N asetshenziswa kabi. Ukungabikho kwama-PN junctions nakho kungenye yezizathu ezenza ukuthi i-EL imaging ibe mnyama ngokuphelele.
(3). Umphumela wengxenye: i-coefficient yokugcwalisa kanye namandla okukhipha ingxenye kuzothinteka kakhulu. Amandla okukhipha emojuli yonke ye-PV ancishisiwe, futhi amandla aphezulu ejika eliyisici le-IV ancishisiwe.
(4). Izinyathelo Zokuqapha: uma ibhethri lishisiwe, i-solder ishiywa onqenqemeni ukuze kugwenywe amalunga e-solder emazingeni okushisa aphansi. Ngemva kokuba i-assembly ishisiwe, hlola ukuthi ngabe i-diode yebhokisi lokuxhumanisa ishisiwe yini nokuthi ngabe ucingo oluphambili lushisiwe ngendlela engavamile.
Ngamafuphi, i-photovoltaic panel EL detector iyithuluzi elibalulekile lokuthola, ohlelweni lwamandla elanga idlala indima ebaluleke kakhulu. Ayikwazi nje ukuthuthukisa ukusebenza kahle kokuguqulwa kwe-photoelectric, inciphise izindleko, ikhuthaze ukuthuthukiswa kwamandla avuselelekayo, kodwa futhi iqinisekise ukuzinza nokusebenza kahle kohlelo lokukhiqizwa kwamandla elanga.
