Waa maxay macnaha baytariga TOPCon?
Magaca buuxa ee TOPCon waa Tunnel Oxide Passivating Contacts, kaas oo u turjumaya Tunneling Oxide Passivated Contacts, oo ah tignoolajiyada unugyada wafer silicon nooca N-nooca ah ee la soo jeediyay 2013. Unugyada TOPCon, tusaale ahaan Tunneling Oxide Passivated Contacts unugyada qorraxda, waxaa loogu talagalay inay horumariyaan waxtarka unugyada qorraxda iyagoo xallinaya dhibaatada passivation-ka xulashada ee sideyaasha ku jira unugga.
Dusha hore ee unugyada TOPCon iyo qaab-dhismeedka unugyada qorraxda ee caadiga ah ee N-nooca ah waa isku mid, farqiga ugu weyn ee dhabarka dambe ee unugyada si loo diyaariyo lakab silicon oxide aad u khafiif ah, ka dibna lakab khafiif ah oo ah dhigista silicon ee la duray, labaduba waxay sameeyaan qaab-dhismeed xiriir oo aan la joojin karin, si wax ku ool ah u yareeya isku-dhafka dusha sare iyo isku-dhafka taabashada birta.
Sababtoo ah saameynta wanaagsan ee nuugista silicon oxide aad u khafiif ah iyo filimka silicon ee aadka loo dahaadhay waxay ka dhigaan xargaha tamarta dusha sare ee wafer-ka silicon inay soo saaraan foorarsi, sidaas darteedna waxay sameeyaan saameyn nuugista goobta, fursadaha tunnel-ka elektarooniga ah ayaa si weyn u kordhay, iska caabbinta xiriirka ayaa hoos u dhacda, ugu dambayntiina waxay hagaajisaa hufnaanta beddelka.
Maxay TOPCon u beddeshay tiknoolajiyadda PERC?
Sannadkii 2023, warshadaha PV waxay arkeen horumar muhiim ah iyadoo lagu daray in ka badan 400GW oo ah awood wax soo saar cusub oo TOPCon ah. Waxaa la filayaa in tiknoolajiyada unugyada TOPCon ay ka sarreyn doonto PERC-ga dhaqameed si ay u noqoto tignoolajiyadda cusub ee caadiga ah marka la gaaro 2024. Marka la eego wax soo saarka, waxaa la filayaa in wax soo saarka TOPCon uu gaaro qiyaastii 100GW sanadkan, taasoo ka dhigan 20%-30% wadarta wax soo saarka unugyada PV. Maadaama ay tahay habka ugu kharashka badan ee unugyada N-nooca, unugyada TOPCon waxaa loo arkaa inay yihiin awood wax soo saar tayo sare leh oo yar, xaaladda sahayda oo ka badan baahida ayaa sii socon doonta sanadka oo dhan. Iyadoo la horumarinayo joogtada ah ee hufnaanta baytariga TOPCon, booska ugu sarreeya ee baytariga TOPCon ee N-nooca ayaa la filayaa inuu sii ballaarto, taasoo saameyn wanaagsan ku yeelan doonta kobaca ganacsiga ee shirkadaha khuseeya.
Batariga nooca N-ga ah weli ma uusan fahmin arrinta ugu muhiimsan ee ballaarinta wax soo saarka baaxadda weyn ayaa ah in hufnaantiisa iyo baytariyada nooca P-ga ah aysan furin farqi weyn oo u dhexeeya qiimaha aan silikoonka ahayn ee 30% -40% ka sarreeya batteriga PERC. Hufnaanta baytariga PERC waxay ku dhowdahay saqafka, booska lagu dhimayo kharashka booska ayaa xaddidan, laakiin hufnaanta baytariga TOPCon si loo hagaajiyo weli waxay leedahay awood weyn. Sida laga soo xigtay xogta PV Infolink, qiimaha hadda aan silikoonka ahayn ee unugyada TOPCon waa ku dhawaad $0.3 halkii watt, marka la barbar dhigo qiimaha unugyada PERC ee cabbirka weyn u dhexeeya $0.21-0.23 halkii watt, weli waxaa jira farqi. Si kastaba ha ahaatee, dadaallada joogtada ah ee xiga, kharashka wax soo saarka ee unugyada TOPCon wuxuu si tartiib tartiib ah ugu dhowaan doonaa heerka unugyada PERC.
Waa maxay faa'iidooyinka baytariga TOPCon?
1. Faa'iidada ku jirta passivation: waxqabadka passivation-ka dusha sare wuxuu inta badan ku xiran yahay passivation-ka kiimikada iyo passivation-ka goobta, koritaanka kulaylka ee SiO2 wuxuu leeyahay awood passivation kiimiko oo heer sare ah. Doping-ka culus ee polysilicon wuxuu kicin karaa xarigga tamarta ee silicon inuu leexdo, taasoo keenta isku-darka inta badan bixiyayaasha iyo yaraanta bixiyayaasha tirada yar ee is-dhexgalka, taasoo yaraynaysa isku-dhafka oo door ka ciyaaraysa passivation-ka goobta.
2. Faa'iidada isku-dhafka taabashada birta: isku-dhafka taabashada birta ayaa noqda caqabadda xaddidaysa waxtarka qaab-dhismeedka caadiga ah ee unugyada qorraxda. Warshadaha birta-samaynta badanaa waa daabacaadda shaashadda ka dib marka la nadiifiyo heerkulka sare, habka sintering heerkulka sare ee koollada birta ayaa "qoyn doonta" poly-Si si ay u sameyso "duul" (Spiking), taasoo burburinaysa passivation-ka qaab-dhismeedka xiriirka, taasoo keentay in aagga taabashada birta ee J0c uu ka sarreeyo aagga taabashada birta marka loo eego aagga sintering-ka. Laakiin p + poly iyo n + isku-dhafka taabashada birta poly, xitaa haddii "duul" ay burburin doonto qaab-dhismeedka xiriirka passivation ee kiiska ayaa ka dhigi kara isku-dhafka birta inuu aad uga hooseeyo kan caadiga ah ee soo saara / goobta dambe.
3. Faa'iidada iska caabbinta taabashada birta: marka lagu daro isku-dhafka taabashada birta, iska caabbinta taabashada birta-semiconductor (ρc) sidoo kale waa mid muhiim u ah waxqabadka qalabka ee unugyada qorraxda ee silicon crystalline, birta-semiconductor si loo sameeyo xiriir ohmic oo wanaagsan si loo yareeyo luminta iska caabbinta loona hagaajiyo qodobka buuxinta.
