Kusho ukuthini ibhethri le-TOPCon?
Igama eliphelele le-TOPCon yi-Tunnel Oxide Passivating Contacts, elihunyushwa ngokuthi i-Tunneling Oxide Passivated Contacts, ubuchwepheshe be-silicon wafer cell obuwuhlobo lwe-N obaphakanyiswa ngo-2013. Amaseli e-TOPCon, okungukuthi amaseli elanga e-Tunneling Oxide Passivated Contacts, aklanyelwe ukuthuthukisa ukusebenza kahle kwamaseli elanga ngokuxazulula inkinga yokudlulisa okukhethwayo kwabathwali abasesiseleni.
Ubuso bangaphambili beseli le-TOPCon kanye nesakhiwo samaseli elanga esivamile sohlobo lwe-N kuyafana, umehluko omkhulu ngemuva kweseli ukulungiselela ungqimba lwe-silicon oxide oluncane kakhulu, bese kuba ungqimba oluncane lwe-silicon deposition ehlanganisiwe, lokhu kokubili ndawonye kwakha isakhiwo sokuxhumana esingasebenzi, kunciphisa ngempumelelo inhlanganisela yokuxhumana ebusweni kanye nenhlanganisela yokuxhumana yensimbi.
Ngenxa yomphumela omuhle wokuphasiswa kwe-silicon oxide encane kakhulu kanye nefilimu ye-silicon efakwe kakhulu kwenza amabhande wamandla aphezulu e-silicon wafer akhiqize ukugoba, ngaleyo ndlela akha umphumela wokuphasiswa kwensimu, amathuba okuthi ama-electron angene anda kakhulu, ukumelana kokuthintana kwehla, futhi ekugcineni kuthuthukise ukusebenza kahle kokuguqulwa.
Kungani i-TOPCon ithatha indawo yobuchwepheshe be-PERC?
Ngo-2023, imboni ye-PV yabona intuthuko ebalulekile ngokungezwa kwamandla amasha okukhiqiza i-TOPCon angaphezu kuka-400GW. Kulindeleke ukuthi ubuchwepheshe bamaseli e-TOPCon buzodlula i-PERC yendabuko ukuze bube ubuchwepheshe obusha obujwayelekile ngo-2024. Ngokuphathelene nokukhiqiza, kulindeleke ukuthi ukukhiqizwa kwe-TOPCon kuzofinyelela cishe ku-100GW kulo nyaka, okubalwa u-20%-30% wokukhiqizwa kwamaseli e-PV aphelele. Njengomzila wamaseli e-N-type osebenza kahle kakhulu, amaseli e-TOPCon abhekwa njengamandla okukhiqiza asezingeni eliphezulu futhi antulekayo, futhi isimo sokuhlinzekwa okungaphezu kwesidingo sizoqhubeka unyaka wonke. Ngokuthuthuka okuqhubekayo kokusebenza kahle kwebhethri le-TOPCon, isikhala sebhethri le-TOPCon lohlobo lwe-N kulindeleke ukuthi sande kakhulu, okuzoba nomthelela omuhle ekukhuleni kwebhizinisi lezinkampani ezifanele.
Ibhethri lohlobo lwe-N alikaqapheli ukuthi inkinga ebalulekile yokwanda kokukhiqiza okukhulu ukuthi ukusebenza kahle kwalo kanye namabhethri ohlobo lwe-P akukavuli igebe elikhulu phakathi kwezindleko ezingezona eze-silicon ezingama-30% -40% eziphakeme kunebhethri le-PERC. Ukusebenza kahle kwebhethri le-PERC kusondele ophahleni, isikhala sokunciphisa izindleko zesikhala sinqunyelwe, kodwa ukusebenza kahle kwebhethri le-TOPCon ukuze lithuthuke kusenamandla amakhulu. Ngokusho kwedatha ye-PV Infolink, izindleko zamanje ezingezona eze-silicon zamaseli e-TOPCon ziseduze no-$0.3 nge-watt, uma kuqhathaniswa nezindleko zamaseli amakhulu e-PERC phakathi kuka-$0.21-0.23 nge-watt, futhi kusenegebe. Kodwa-ke, ngemizamo eqhubekayo elandelayo, izindleko zokukhiqiza zamaseli e-TOPCon zizosondela kancane kancane ezingeni lamaseli e-PERC.
Yiziphi izinzuzo zebhethri le-TOPCon?
1. Inzuzo ekudluliseni: ukusebenza kokudlulisa okuphezulu kuncike kakhulu ekudluliseni kwamakhemikhali kanye nokudlulisa kwensimu, ukukhula kokushisa kwe-SiO2 kunekhono elihle kakhulu lokudlulisa kwamakhemikhali. Ukufaka i-doping enzima ku-polysilicon kungabangela ibhendi yamandla ye-silicon ukuba igobe, okuholela ekuhlanganisweni kwabathwali abaningi kanye nokuncipha kwabathwali abancane endaweni exhumanayo, kunciphisa inhlanganisela futhi kudlala indima yokudlulisa kwensimu.
2. Inzuzo ku-composite yensimbi yokuxhumana: i-composite yensimbi yokuxhumana iba yimbangela yokunciphisa ukusebenza kahle kwesakhiwo esivamile seseli yelanga. Ukwenziwa kwe-metallization kuvame ukuphrinta kwesikrini ngemuva kokushisa okuphezulu, inqubo yokushisa okuphezulu yokusinta insimbi izonamathela "etch" i-poly-Si ukuze yakhe "ukubhoboza" (Spiking), ibhubhise ukuphasiswa kwesakhiwo sokuxhumana, okuholela endaweni yokuxhumana yensimbi ye-J0c iphakeme endaweni yokuxhumana yensimbi kunasendaweni ephasisiwe. Kodwa i-p + poly kanye ne-n + poly metal contact composite, noma ngabe "ukubhoboza" kuzobhubhisa isakhiwo sokuxhumana se-passivation secala kungenza i-composite yensimbi ibe ngaphansi kakhulu kunensimu evamile ye-emitter / back.
3. Inzuzo ekumelaneni nokuxhumana kwensimbi: ngaphezu kwenhlanganisela yokuxhumana kwensimbi, ukumelana nokuxhumana kwensimbi-semiconductor (ρc) nakho kubalulekile ekusebenzeni kwedivayisi kwamaseli elanga e-crystalline silicon, i-metal-semiconductor ukwakha ukuxhumana okuhle kwe-ohmic ukusiza ukunciphisa ukulahlekelwa ukumelana nokuthuthukisa isici sokugcwalisa.
