I-photovoltaic panel EL detector luhlobo lwesixhobo esisetyenziselwa ukubona iphaneli ye-photovoltaic (iphaneli yelanga). Isekelwe kumgaqo we-electroluminescence we-crystalline silicon. I-Electroluminescence (el) yinto apho i-voltage esetyenzisiweyo ikhawulezisa intshukumo yabathwali kuLuhlu lwezinto ze-semiconductor phantsi kwesenzo sentsimi yombane, iguqula inxalenye yamandla e-kinetic ibe ngamandla agqamileyo. I-photovoltaic panel EL detector isebenzisa lo mgaqo ukuthwebula umfanekiso we-crystalline silicon okufutshane ngekhamera ye-infrared enesisombululo esiphezulu kwaye ifumane umfanekiso weseli.
Umsebenzi ophambili we-photovoltaic panel EL detector kukubona ngokuchanekileyo iziphene ezahlukeneyo zephaneli ye-photovoltaic, iiparameter ziquka ukuqhekeka kwesango, ukuqhekeka, iqhekeza, iqhekeza, i-braze welding, i-sintered mesh, i-black core, i-Letter boxing, i-blending, i-low efficiency chip, i-Edge etching, i-PID, i-attenuation, i-hot spot attenuation, njl. Ezi ziphene zinokuchaphazela ukusebenza kunye nomgangatho weephaneli ze-photovoltaic kwaye, ukuba azifunyanwanga kwaye zilungiswe ngexesha elifanelekileyo, zinokuchaphazela kakubi ukusebenza kunye nokuzinza kwenkqubo yonke yokuvelisa umbane welanga.
Ukongeza ekubeni ikwazi ukubona ngokuchanekileyo iziphene zeepaneli zePV, i-PV panel EL detector inezinye iingenelo. Umzekelo, inokuchaneka okuphezulu nokusebenza kakuhle, ingabona ngokukhawuleza nangokuchanekileyo indawo kunye nohlobo lweziphene. Ukongeza, i-EL detector inenzuzo yovavanyo olutshabalalisayo yokuba ayizukubangela umonakalo emzimbeni kwipaneli ye-photovoltaic ephantsi kovavanyo okanye ichaphazele ukusebenza kwayo.
Imifanekiso yovavanyo lwe-EL efanelekileyo yile ilandelayo:
Nazi ezinye zeziphene eziqhelekileyo kwiiphaneli ze-photovoltaic:
Ibhetri iqhekekile
(1). Izizathu: iphaneli yebhetri yaqhekeka ngenxa yamandla angaphandle ngexesha lokuwelda okanye ukunyanga; kubushushu obuphantsi, iphaneli yebhetri ayizange ifumane unyango lokufudumeza kwangaphambili, kwaye emva kwexesha elifutshane lobushushu obuphezulu, yabonakala ngequbuliso yanda, nto leyo eyabangela ukuqhekeka; Ubushushu bebhetri buphezulu kakhulu ngexesha lokuwelda okukodwa okanye ukuwelda ngokulandelelana.
(2). Isiphumo seModule: sibangela ukuncitshiswa kwamandla kwemodule, kwaye isiphumo sendawo eshushu siya kubangelwa xa imodule isebenza ixesha elide, nto leyo eya kuchaphazela ngqo ukusebenza kwebhetri ide imodule itshiswe ize ilahlwe.
(3). Amanyathelo okuthintela: ngexesha lokuwelda okanye ukucubungula ukuze kuthintelwe impembelelo yamandla angaphandle kwipleyiti yebhetri, ngexesha lokuwelda ipleyiti yebhetri enye okanye edibeneyo ukuya kunyango lwangaphambi kobushushu, ubushushu bokusebenza kwentsimbi yombane kufuneka buhlangabezane neemfuno zobugcisa zenkqubo yemveliso.
Isango Eliphukileyo
(1). Iimpawu ze-EL imaging: ukusuka kumfanekiso we-El, kukho imigca ethe nkqo phakathi kwemigca emibini yegridi, kwaye kukho imigca emnyama ecaleni komgca oyintloko wegridi yeseli. Kwangaxeshanye, ukukhanya okubuthathaka okanye ukungakhanyi kakuhle kwi-thin grating kubangelwa ikakhulu ziiseli ezingadibaniyo.
(2). Izizathu: esona sizathu somonakalo wesango yindawo yokuqhekeka kwesango elincinci kunye nokulahleka kwesango elincinci, okukhokelela kumgca wesango ophambili kwaye umgca wesango elincinci awukwazi ukwenza iluphu. Kwangaxeshanye, igridi ayiyo-welding eqhelekileyo okanye iprinta yebhodi yebhetri, umgangatho wokuprinta kwesikrini awulungile okanye iiparameter zokuprinta kwesikrini azimiselwanga kakuhle, ukusika i-silicon kungalingani, iimpazamo.
(3). Isiphumo seModule: ngelixa inciphisa ukusebenza kakuhle kweModule ye-photovoltaic, ayilungelanga ukuqokelela umbane.
(4). Amanyathelo okuthintela: ukuseta iiparameter zokuprinta isikrini ezifanelekileyo, ukuhlanganiswa kwezinto zesikrini, ukuseka iinkqubo zokusebenza ezisemgangathweni zesikrini, ukujonga ngexesha langempela i-RS inokunciphisa kakhulu ukwaphuka kwesango lokuprinta isikrini, kwangaxeshanye inokuxhotyiswa ngomatshini wokuhlela ngokuzenzekelayo wokujonga kwi-intanethi.
Itshiphusi emnyama
(1). Iimpawu ze-EL imaging: kumfanekiso we-EL, ungabona izangqa ezixineneyo ezikhanya kancinci kancinci ukusuka embindini ukuya kumphetho weseli. Inxalenye yebhetri imnyama kwaye umfanekiso ubonakala ubuthathaka okanye ungakhanyi. Oku kwenza indawo exineneyo edibeneyo, kwimeko yamandla, embindini webhetri ubonakala umnyama.
(2). Kwinkqubo yokwenza i-silicon rod crystallization, i-coefficient ephezulu yokwahlulwa kwe-silicon rod inxulumene ngokuthe ngqo nokunyibilika kwe-oksijini, kwaye izinto ze-silicon zingcoliswa ngamaqondo ahlukeneyo, nto leyo ebangela ukuba inxalenye yebhetri ibe mnyama. Kwangaxeshanye, ngenxa yokunciphisa ixesha lokuqina kwecala, ukukhululwa kobushushu obufihlakeleyo kunye nokuhambelana kobushushu bokunyibilika akuphezulu, isantya sokukhula kwe-crystal siyakhawuleza, kwaye unobangela oyintloko wokuphazamiseka kwangaphakathi kuxinzelelo olugqithisileyo lobushushu.
(3). Impembelelo yecandelo: emva kokuba kuvela itshiphu emnyama kwicandelo, ukusebenza ixesha elide kuya kubangela ukuqhekeka kobushushu, xa ijika elinophawu lwecandelo lovavanyo lwe-IV, ijika libonakala limile njengeleli, ukusebenza ixesha elide kuya kubangela ukuba amandla okukhupha icandelo ehle.
(4). Amanyathelo okuthintela: lungisa ngokufanelekileyo i-big coefficient yokuxinana kunye nokunyibilika kweoksijini kwi-silicon rod ukuze kuthintelwe ungcoliseko lwezinto ze-silicon.
Itshiphu emnyama yesekethe emfutshane (itshiphu emnyama engeyosekethe emfutshane)
(1). Iimpawu zomfanekiso we-EL: iimodyuli ze-photovoltaic kwindawo ethile ziya kuvela iqhekeza elinye okanye ngaphezulu leBhetri emnyama ngokupheleleyo.
(2). Izizathu: ukujikeleza okufutshane phakathi kwee-electrode ezilungileyo nezingalunganga, ukuwelda okungasemva phakathi kwee-electrode ezilungileyo nezingalunganga ze-diode yebhokisi yokudibanisa, uqhagamshelo olunempazamo kunye nokuwelda okubonakalayo phakathi kwee-electrode ezilungileyo nezingalunganga, njl.njl., iiyunithi zeeseli ezixutyiweyo ezingasebenzi kakuhle, kunye nee-wafers ze-silicon ezikumgangatho ophantsi okanye ii-wafers zohlobo lwe-N zisetyenziswa gwenxa. Ukungabikho kwee-PN junctions kukwayenye yezizathu zokuba i-EL imaging ibe mnyama ngokupheleleyo.
(3). Isiphumo secandelo: i-coefficient yokuzalisa kunye namandla okukhupha ecandelo ziya kuchaphazeleka kakhulu. Amandla okukhupha emodyuli yonke ye-PV ayancitshiswa, kwaye amandla aphezulu e-IV characteristic curve ayancitshiswa.
(4). Amanyathelo okhuseleko: xa ibhetri idityanisiwe, i-solder ishiywa ecaleni ukuze kuthintelwe amalungu e-solder kumaqondo obushushu aphantsi. Emva kokuba i-assembly idityanisiwe, jonga ukuba ingaba i-diode yebhokisi ye-junction idityanisiwe na kwaye ingaba ucingo lwe-lead ludityanisiwe ngendlela engaqhelekanga.
Ngamafutshane, isixhobo sokubona i-photovoltaic panel EL sisixhobo esibalulekileyo sokufumanisa, kwinkqubo yamandla elanga idlala indima ebaluleke ngakumbi. Ayinakuphucula kuphela ukusebenza kakuhle kokuguqulwa kwe-photoelectric, inciphise iindleko, ikhuthaze uphuhliso lwamandla ahlaziyekayo, kodwa ikwaqinisekisa uzinzo kunye nokusebenza kakuhle kwenkqubo yokuvelisa umbane welanga.
