Ithetha ukuthini ibhetri ye-TOPCon?
Igama elipheleleyo le-TOPCon yi-Tunnel Oxide Passivating Contacts, eliguqulela kwi-Tunneling Oxide Passivated Contacts, iteknoloji yeseli ye-silicon wafer yohlobo lwe-N eyacetywayo ngo-2013. Iiseli ze-TOPCon, oko kukuthi iiseli zelanga ze-Tunneling Oxide Passivated Contacts, zenzelwe ukuphucula ukusebenza kakuhle kweeseli zelanga ngokusombulula ingxaki yokuchithwa kweeseli ezikhethiweyo kwiseli.
Umphezulu ongaphambili weseli ye-TOPCon kunye nolwakhiwo lweseli yelanga yohlobo lwe-N oluqhelekileyo luyafana, umahluko ophambili ngasemva kweseli ukulungiselela umaleko we-silicon oxide ebhityileyo kakhulu, uze emva koko umaleko obhityileyo we-silicon deposition exutyiweyo, ezi zimbini zidityaniswe zenze isakhiwo soqhagamshelwano esingasebenziyo, kunciphisa ngempumelelo i-composite yomphezulu kunye ne-composite yoqhagamshelwano lwesinyithi.
Ngenxa yesiphumo esihle sokudlula kwe-silicon oxide encinci kakhulu kunye nefilimu ye-silicon exutywe kakhulu yenza ukuba iibhendi zamandla omphezulu we-silicon wafer zivelise ukugoba, ngaloo ndlela zenze isiphumo sokudlula kwentsimi, amathuba okutsiba kwee-electron anyuke kakhulu, ukumelana nokudibana kuncipha, kwaye ekugqibeleni kuphucule ukusebenza kakuhle kokuguqulwa.
Kutheni i-TOPCon ithatha indawo yetekhnoloji ye-PERC?
Ngowama-2023, imboni ye-PV ibone impumelelo ebalulekileyo ngokongezwa kwamandla amatsha emveliso ye-TOPCon angaphezu kwama-400GW. Kulindeleke ukuba iteknoloji yeeseli ze-TOPCon idlule i-PERC yendabuko ibe yiteknoloji entsha ephambili ngo-2024. Ngokuphathelele imveliso, kulindeleke ukuba imveliso ye-TOPCon ifikelele malunga ne-100GW kulo nyaka, ibandakanya i-20%-30% yemveliso iyonke yeeseli ze-PV. Njengendlela yeeseli ze-N-type cell ezingabizi kakhulu, iiseli ze-TOPCon zithathwa njengezikumgangatho ophezulu kwaye zinqabile, kwaye imeko yokubonelela idlula imfuno iya kuqhubeka unyaka wonke. Ngokuphucuka okuqhubekayo kokusebenza kakuhle kweebhetri ze-TOPCon, indawo yeprimiyamu yebhetri ye-TOPCon yohlobo lwe-N kulindeleke ukuba yande ngakumbi, nto leyo eya kuba nefuthe elihle ekukhuleni kweshishini leenkampani ezifanelekileyo.
Ibhetri yohlobo lwe-N ayikayiqondi into yokuba ingxaki ephambili yokwandiswa kwemveliso enkulu kukuba ukusebenza kwayo kakuhle kunye neebhetri zohlobo lwe-P azivulanga msantsa ubalulekileyo phakathi kwexabiso elingeyo-silicon elingama-30% -40% ngaphezulu kunebhetri ye-PERC. Ukusebenza kakuhle kwebhetri ye-PERC kuye kwasondela eluphahleni, indawo yokunciphisa iindleko zendawo inqunyelwe, kodwa ukusebenza kakuhle kwebhetri ye-TOPCon ukuphucula kusenamandla amakhulu. Ngokwedatha ye-PV Infolink, ixabiso langoku elingeyo-silicon leeseli ze-TOPCon lisondele kwi-$0.3 nge-watt, xa kuthelekiswa nexabiso leeseli ezinkulu ze-PERC eziphakathi kwe-$0.21-0.23 nge-watt, kwaye kusekho umsantsa. Nangona kunjalo, ngemizamo eqhubekayo elandelayo, iindleko zemveliso yeeseli ze-TOPCon ziya kusondela kancinci kwinqanaba leeseli ze-PERC.
Zithini iingenelo zebhetri ye-TOPCon?
1. Inzuzo ekudluliseni: ukusebenza kokudlulisa umphezulu kuxhomekeke kakhulu ekudluliseni kweekhemikhali kunye nokudlulisa intsimi, ukukhula kobushushu kweSiO2 kunamandla agqwesileyo okudlulisa iikhemikhali. Ukufaka i-doping eninzi kwi-polysilicon kunokubangela ukuba ibhendi yamandla ye-silicon igobe, okubangela ukuhlanganiswa kweqela leenkampani ezininzi kunye nokuncipha kweqela leenkampani ezincinci kwindawo yokujonga, kunciphisa i-composite kwaye kudlala indima yokudlulisa intsimi.
2. Inzuzo kwi-metal contact composite: i-metal contact composite iba yingxaki enkulu, nto leyo ethintela ukusebenza kakuhle kwesakhiwo se-solar cell. Ukwenziwa kwe-metallization kudla ngokuprintwa kwesikrini emva kokutshisa ubushushu obuphezulu, inkqubo ye-metal sintering temperature ephezulu iya "kuqhekeza" i-poly-Si ukuze yenze "ukubhoboza" (i-Spiking), itshabalalisa ukubhoboza kwesakhiwo soqhagamshelwano, nto leyo ebangela ukuba indawo yoqhagamshelwano lwesinyithi ye-J0c ibe phezulu kwindawo yoqhagamshelwano lwesinyithi kunakwindawo engasebenziyo. Kodwa i-p + poly kunye ne-n + poly metal contact composite, nokuba "ukubhoboza" kuya kutshabalalisa isakhiwo soqhagamshelwano lwe-passivation se-case singenza i-metal composite ibe phantsi kakhulu kune-emitter / back field eqhelekileyo.
3. Inzuzo ekuchaseni uqhagamshelwano lwesinyithi: ukongeza kwi-composite yoqhagamshelwano lwesinyithi, i-metal-semiconductor contact resistivity (ρc) ikwabalulekile ekusebenzeni kwesixhobo se-crystalline silicon solar cells, i-metal-semiconductor ukwenza i-ohmic contact elungileyo ukunceda ukunciphisa ilahleko yokumelana nokuphucula i-fill factor.
