Kukho iintlobo ngeentlobo zamandla angaphakathi kwiiseli zelanga, ezifana nombane omnyama, umbane obuyela umva, kunye nombane ovuzayo. La mandla anefuthe elahlukileyo kwimveliso yamandla eemodyuli zelanga. Ukwahlula iimpawu zala mandla kunokunceda ekuchongeni izizathu zokuphuma kwamandla emodyuli ngendlela engaqhelekanga, okufaka isandla kwisisombululo esipheleleyo seengxaki.
Umbane Omnyama
Inkcazo
Umbane omnyama, okwaziwa ngokuba ngumbane ongqindilili phantsi kokukhanya okungenakukhanya, ubhekisa kumbane ongqindilili we-DC owenziwe kwindawo yokuhlangana kwe-PN phantsi kweemeko ze-reverse bias xa kungekho kukhanya kwesiganeko. Ngokuqhelekileyo kubangelwa kukusasazwa okanye iziphene kumphezulu nangaphakathi kwesixhobo, kunye nokungcola okuyingozi.
Ulwakhiwo
(1).Inkqubo yokusasazwa:Ngaphakathi kwindawo yokuhlangana kwe-PN, kukho ii-electron ezingaphezulu kwindawo ye-N kunye nemingxuma emininzi kwindawo ye-P. Ngenxa yomahluko woxinzelelo, ii-electron kwindawo ye-N ziyasasazeka ziye kwindawo ye-P, kwaye imingxuma kwindawo ye-P iyasasazeka iye kwindawo ye-N. Nangona intsimi yombane eyakhelwe ngaphakathi yendawo yokuhlangana kwe-PN iyamelana nokusasazeka, kusenzeka de kufikelelwe kwi-dynamic equilibrium, okwenza umsinga wokusasazwa.
(2).Iziphene kunye nokungcola:Xa kukho iziphene kumphezulu okanye ngaphakathi kwisixhobo, zisebenza njengeziko lokudibanisa, zibamba ii-elektroni kunye nemingxunya kwaye ziququzelele ukuhlanganiswa kwakhona. Ukungcola okuyingozi kudlala indima efanayo, okufaka isandla ekwakhiweni komsinga omnyama.
Impembelelo
Umnyama udla ngokuqwalaselwa ngexesha lokuhlelwa kwe-silicon wafer. Umnyama ogqithisileyo ubonisa umgangatho ophantsi we-wafer, njengeemeko ezininzi zomphezulu, iziphene ezininzi ze-lattice, ukungcola okuyingozi, okanye ubuninzi be-doping ephezulu kakhulu. Iiseli zelanga ezenziwe nge-wafers ezinjalo zihlala zibonisa ubomi obuphantsi bokuthwala, nto leyo ekhokelela ngokuthe ngqo ekusebenzeni okuphantsi kokuguqulwa.
Umbane Omnyama kwiiseli zelanga
Kwii-diode ezilula, umsinga omnyama uhambelana nomsinga wokugcwala obuyela umva. Nangona kunjalo, kwiiseli zelanga, umsinga omnyama uquka umsinga wokugcwala obuyela umva, umsinga wokuvuza onamaleko amancinci, kunye nomsinga wokuvuza obuninzi.
Ukusasazwa Kwangoku Okubuyela Umva
Inkcazo
Umsinga wokugcwalisa obuyela umva ubhekisa kumsinga okwindawo yokuhlangana kwe-PN xa kusetyenziswa i-reverse bias. I-reverse voltage yandisa umaleko wokuphelelwa ngamandla, yandisa intsimi yombane kunye namandla anokubakho ee-electron. Oku kwenza kube nzima kwiinkampani ezininzi ezithwala amandla ukunqumla umqobo, kunciphisa umsinga wokusasazwa kwamandla ukuya kufutshane no-zero.
Ulwakhiwo
1. Umbane ohambayo: Ukwanda kwamandla ombane kwenza kube lula ukuba abathwali bezithuthi ezincinci kwimimandla ye-N kunye ne-P bahambe, benze umbane ohambayo.
2. Ukuxhomekeka kubushushu: Ekubeni iimoto ezincinci ziveliswa ngobushushu, inani lazo aliguquguquki kubushushu obuthile, kwaye kunjalo nangomsinga ongasemva.
Ukuvuza kwangoku
Inkcazo
Iiseli zelanga zinokwahlulwa zibe ziingingqi ezintathu: umaleko omncinci (ummandla we-N), umaleko wokuphelelwa ngamandla (i-PN junction), kunye nommandla omkhulu (ummandla we-P). Iziphene kunye nokungcola kwezi ndawo zisebenza njengeziko lokuphinda-phinda, zibamba ii-electron kunye nemingxunya ukuze kube lula ukuphinda-phinda. Le nkqubo ivelisa imisinga emincinci, enegalelo kumbane omnyama olinganisiweyo.
Iintlobo
· Umsinga wokuvuza onamaleko amancinci: Ubangelwa ziziphene kunye nokungcola kumaleko omncinci.
· Umsinga wokuvuza kobuninzi: Okubangelwa ziziphene kunye nokungcola kwindawo enkulu.
Injongo yoVavanyo lwaMnyama lwangoku
1. Ukuthintela Ukuqhekeka
Xa iseli ijike yaya kwicala elinye okanye i-module polarity ijike yaya kwelinye icala, umnyama omninzi unokukhokelela ekuqhekekeni kweseli ngokukhawuleza. Nangona kunqabile, ukuvavanya umnyama omninzi kunceda ukuthintela ukwenzeka okunjalo.
2. Ukubeka esweni iinkqubo zemveliso
Uvavanyo lwamandla amnyama lunceda ekuchongeni iingxaki ezinokubakho zenkqubo. Amandla amnyama enziwe yi-reverse saturation current, i-thin-layer leakage current, kunye ne-bulk leakage current, emelwe yi-J1J_1J1, J2J_2J2, kunye ne-J3J_3J3, ngokulandelelana.
Xa kusetyenziswa i-voltage ebuyela umva:
· Ummandla 1: Ulawulwa yi-J2J_2J2 (umsinga wokuvuza onamaleko amancinci).
· Ummandla 2: Ulawulwa yi-J3J_3J3 (umsinga wokuvuza ngobuninzi).
· Ummandla 3: Ulawulwa yi-J1J_1J1 (umsinga wokugcwala ongasemva).
Imida yale mimandla imiselwa zii-voltage ezithile zovavanyo.
Iziphumo zeVoltage
Xa i-voltage ifakwa kwiseli, ibangela ukufakwa kombane kwi-silicon wafer, izinto ezibangela umdla ezingezizo ezokulingana. Okukhona i-voltage iphezulu, kokukhona i-carriers ivuselelwa ngakumbi, nto leyo ekhokelela kumbane omnyama ophezulu. Nangona kunjalo, izinga lokukhula liyehla njengoko i-voltage inyuka ide iseli yaphuke.
Uvavanyo oluqhelekileyo
Umsinga omnyama udla ngokuvavanywa kwi-12V. Ngokuthelekisa iziphumo zovavanyo kwii-standard curves, imeko yeseli inokuvavanywa:
· Ubumnyama obuninzi kwiNgingqi 1 bubonisa iingxaki kumaleko omncinci.
· Ubumnyama obuninzi kwiNgingqi yesi-2 bubonisa iingxaki kwindawo enkulu.
· Ubumnyama obuninzi kwiNgingqi yesi-3 bubonisa iingxaki kwi-PN junction, ezinje ngokusasazeka, ukuprintwa kwesikrini, okanye ukungangqinelani kobushushu.
Isiphelo
Ukuvavanya umsinga omnyama kubalulekile ekuchongeni imiba enxulumene nenkqubo kunye nokuphucula imveliso yeeseli zelanga.
